Analysis of the series resistance and interface state. A fundamental study of advanced metalsemiconductor contacts. Metalsemiconductor contacts monographs in electrical and electronic engineering rhoderick, e. Schematic band diagrams at metalsemiconductor contacts without interface states. Barrier height ohmic contact schottky barrier schottky diode schottky contact. It is well known that the quality of metalsemiconductor contacts plays an important role in the. Metaltosemiconductor ms junctions are of great importance since they are present in every semiconductor device.
The presentday semiconductor technology would be inconceivable without extensive use of schottky barrier junctions. This second edition brings a greatly expanded treatment of th. A schottky barrier is similar to a pn junction or heterojunction in which the doping on one side increases to the point where it becomes metallic. They can behave either as a schottky barrier or as an ohmic contact dependent on the characteristics of the interface. Rhoderick, 1988, clarendon press, oxford university press edition, in english 2nd ed. Metalinsulatorsemiconductor mis photoelectrodes offer a simple alternative to the traditional semiconductorliquid junction and the conventional pn junction electrode. Semiconductor device and material characterization dr. Metalsemiconductor contacts fermi level pinning is the lack of barrier height modulation with metal work function due to either large density of intrinsic states. For example, a schottky diode can be used to study bulk defects and interface properties of a metalsemiconductor system. In schottky barrier diodes, appreciable concentrations of deep levels in the space charge region influence high frequency capacitance. Rhoderick, metalsemiconductor contacts, clarendon press, oxford 1978. According to the method, the parts of the epitactic layer that are deposited in the final phase of the epitaxy are removed by etching and a wet chemical treatment is then carried out in order to remove a thin natural oxide on the surface.
General considerations for improving photovoltage in metal. Metalsemiconductor ohmic contacts stanford university. Ee311 saraswat ohmic contacts 5 for a tunneling contact the net semiconductor to metal current is given by jsm at k. Metalsemiconductor contacts monographs in electrical and electronic engineering. Werner, in metallization and metalsemiconductor interfaces, edited by i. Lowresistance ohmic contacts are a challenge for electronic devices based on twodimensional materials. This second edition brings a greatly expanded treatment of the physics of schottkybarrier formation to its comprehensive discussion of modern. The rectifying metalsemiconductor junction forms a schottky barrier, making a device known as a schottky diode, while. Metalsemiconductor contacts 1988 edition open library. In particular, a large mismatch between the fermi energy of the metal and semiconductor can result is a highresistance rectifying contact.
We show that an atomically precise junction between a twodimensional semiconductor and a metallic contact can lead to a semiconductortometal transition in the twodimensional materiala finding which points the way to a possible method of achieving lowresistance junctions. Metalsemiconductor contacts monographs in electrical and. Metal semiconductor contacts and devices issn, cohen. Selfaligned via and trench for metal contact in iiiv. Friend, cavendish laboratory, madingley road, cambridge c b 3 0 h e, u.
The general structure is a lightly doped ptype substrate, into which two regions, the source and the drain, both of heavily doped ntype semiconductor have been embedded. A new type of nonalloyed ohmic contact to gaas is realized by molecular beam epitaxy. Rhoderick, 9780198593362, available at book depository with free delivery worldwide. Rhoderick, metalsemiconductor contacts, oxford university press, 1978. Fmde 6 where fs and fm are fermidirac distribution functions in metal and semiconductor. The authors present the state of the art in growing, processing, and characterizing electronic junctions.
Download citation metalsemiconductor contacts in this chapter, the basic device physics, the electrical and transport properties, and the formation and. Selfaligned via and trench for metal contact in iiiv semiconductor devices jun fei zhenga intel corporation, santa clara, california 95052. Metalsemiconductor schottky barrier junctions and their. Metalgermanium contacts and germanide formation mrs.
Lau skip to main content we use cookies to distinguish you from other users and to provide you with a better experience on our websites. The band diagram of an ideal metal on ntype semiconductor schottky barrier is shown in figs. Metalsilicon junctions are crucial to the operation of semiconductor devices. Everyday low prices and free delivery on eligible orders. This process yields a pristine semiconductor surface for metal contacts and fully utilizes the contact area available on the device top, no matter. In solidstate physics, a metalsemiconductor ms junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. In this paper, we report the experimental results of thermal. Metalsemiconductor interfaces rectifying schottky junction nonrectifying ohmic contacts 4. Sorry, we are unable to provide the full text but you may find it at the following locations. At the same time, such contacts cannot be assumed to have a resistance as low as that of two connected metals.
Electronic contribution in heat transfer at metalsemiconductor and metal silicidesemiconductor interfaces. A method for the determination of barrier heights from the. Metalsemiconductor contacts display a range of electrical characteristics from strongly rectifying to ohmic, each having its own applications. Effects of thermal annealing of pt schottky contacts on n. The metal oxide semiconductor field effect transistor mosfet is one of the cornerstones of modern semiconductor technology. Metallic contact between mos2 and ni via au nanoglue cover page pdf available in small 1422 may 2018 with 152 reads. As with all of these lecture slides, i am indebted to dr. On the role of the interface charge in nonideal metal. Metalsemiconductor interfaces rectifying schottky junction nonrectifying ohmic contacts 3. Method for processing a surface of an sic semiconductor. Pdf zno schottky barriers and ohmic contacts researchgate. It is well known that the quality of metalsemiconductor contacts plays an important role in the performance of various.
Doitpoms tlp library introduction to semiconductors. Metal semiconductor contacts and devices issn kindle edition by cohen, simon s. In a metalsemiconductor junction under bias, is there current. Overall, they have assembled a broad array of the latest semiconductor interface science and technology, ranging from advanced ohmic, schottky, and heterojunction contacts to the refined perspectives of microscopic junctions gleaned from ultrahigh vacuum surface science techniques. However, it was not until the twentieth century that the atomic theory of matter became firmly established as an unassailable, demonstrated fact. Alan doolittle school of electrical and computer engineering. A similar rectifying device can also be made from the junction of a ptype semiconductor with a metal. A mechanism of carriers transport through metalsemiconductor interface created by nickel or titaniumbased ohmic contacts on siface ntype 4hsic is presented herein.
Europium silicide a prospective material for contacts. On the role of the interface charge in nonideal metalsemiconductor contacts on the role of the interface charge in nonideal metalsemiconductor contacts korosak, dean. Current begins to flow from the semiconductor to the metal. Download fundamentals of modern vlsi devices, yuan taur. Measurement of barrier potiential fb and working of schottky contacts 2 november 2015 7 n type sc n type sc under thermal equlibrium under reverse bias 8. Mechanisms of carriers transport in ninsic, tinsic.
Fb fbp is the barrier against the hole flow between metal and sc. This second edition brings a greatly expanded treatment of the physics of schottkybarrier formation to its comprehensive discussion of modern semiconductor technology. Ideal metalsemiconductor contacts but the point of adding contacts was to apply fields, lets look at this m s metal semiconductor ntype apply positive bias, v v e v e c e i e fs current e fm this lowers e fm below e fs and reduces the barrier seen by electrons. A read is counted each time someone views a publication summary such as the title, abstract, and list of authors, clicks on a figure, or views or downloads the fulltext. Department of electronics engineering, national chiao tung university, hsinchu, taiwan. Highly efficient mis photoanodes require interfacial surface passivating oxides and high workfunction metals to produce a high photovoltage. Unlimited viewing of the articlechapter pdf and any associated supplements and figures.
Metalgermanium contacts and germanide formation volume 47 e. Herein, we investigate and analyze the effect of interfacial oxides and. Indeed, the ancient greeks put this hypothesis forward over two millennia ago. Ms junctions can either be rectifying or nonrectifying. In addition to different device and circuit applications, schottky contacts can also be used as test vehicles for investigating the physical and electrical properties of a semiconductor material and its surfaces. Basic semiconductor material science and solidstate physics all terrestrial materials are made up of atoms. Metalsemiconductor contacts are an obvious component of any semiconductor device.
This can be represented schematically in a manner similar to that shown above for the ntype semiconductor metal case. Schottky contacts using conducting probe atomic force microscopy cafm. A method for treating a surface on an sic semiconductor body produced by epitaxy. Use features like bookmarks, note taking and highlighting while reading metal semiconductor contacts and devices issn.
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